NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, has officially announced the commercial release of its first 3.3 kV SiC MOSFET i.e. the NoMIS N3PT080MP330, which happens to be a planar device with on-resistance of just 80 mΩ (34 A).
According to certain reports, the stated technology arrives bearing an ability to achieve next-generation efficiency, reliability, and performance for demanding power conversion applications. More on the same would reveal how it provides a clear path for customers transitioning from legacy silicon solutions, while simultaneously leveraging the advantages of SiC at higher voltages, including lower switching losses, higher power density, superior thermal performance, and higher survivability than Si IGBTs.
As for the key application areas, they include battery energy storage systems (BESS), renewable energy converters, transportation electrification, and industrial motor drives.
Complementing this would be NoMIS Power’s 160 mΩ SiC bi-directional switches that bestow upon designers multiple options to precisely match device performance with application requirements. In fact, the 3.3 kV lineup is also set to expand in the latter stages of 2025. thanks to the launch of a 50 mΩ (55 A) SiC MOSFET, followed in 2026 by a 25 mΩ (109 A) SiC MOSFET.
Talk about the whole value proposition on a slightly deeper level, we begin from the promise of high efficiency at extreme voltages. This translates to low and stable conduction and switching losses up to 175 oC, compared with Si IGBTs where switching losses can double from 25 oC to 175 oC.
Next up, we have optimal amount of design flexibility coming into play, considering the solution boasts rated performance at both +18 V and +20 V gate drive which enables adoption into legacy systems and plug-and-play IGBT replacements.
Then, there is the potential for ruggedness and reliability. You see, thicker gate oxide improves long-term reliability, and at the same time, reduces input capacitance for faster, lower-loss high-frequency switching. On top of that, NoMIS’ latest brainchild also delivers robust operation in high temperature environments and high elevations with exposure to cosmic rays compared to Si IGBTs of similar rating.
Turning our attention towards application areas for which N3PT080MP330 SiC MOSFET is ideal, they include energy and infrastructure, as it is compatible with battery energy storage systems (BESS), high-power solar inverters, and DC solid-state circuit breakers (SSCBs) that improve efficiency and resilience in medium- and high-voltage networks.
The next use case revolves around global transportation and maritime industry. We say so because the technology in question can seamlessly support railway traction systems, heavy-duty EVs (buses & trucks), agriculture and construction machinery, marine propulsion, as well as ship-to-shore power for ports.
Rounding up highlights would be the the charging and industrial application. This one involves enabling ultra-fast EV charging stations and large industrial motor drives with reliable, high-performance power conditioning and processing control.
“The 3.3 kV market has been waiting for a SiC MOSFET that delivers true medium-voltage capability with the performance, robustness, and design adaptability of our planar platform,” said Adam Morgan, Co-Founder and CEO of NoMIS Power. “With the NoMIS N3PT080MP330 SiC MOSFET, designers can confidently increase efficiency and power density, even in the most demanding environments.”
